Articles you may be interested inBa and Ti co-doped BiFeO3 thin films via a modified chemical route with synchronous improvement in ferroelectric and magnetic behaviors Structural, dielectric, ferroelectric and piezoresponse force microscopy characterizations of bilayered Bi0.9Dy0.1FeO3/K0.5Na0.5NbO3 lead-free multiferroic films Electrical properties of (110) epitaxial lead-free ferroelectric Na0.5Bi0.5TiO3 thin films grown by pulsed laser deposition: Macroscopic and nanoscale data Effect of kinetic growth parameters on leakage current and ferroelectric behavior of BiFeO 3 thin films Piezoresponse and ferroelectric properties of lead-free [ Bi 0.5 ( Na 0.7 K 0.2 Li 0.1 ) 0.5 ] Ti O 3 thin films by pulsed laser deposition

Multiferroic bilayered thin films consisting of [(Bi1/2Na1/2)0.94Ba0.06]TiO3 (BNBT) and BiFeO3 (BFO) nanolayers were successfully grown on Pt/TiO2/SiO2/Si substrates via a combined sol-gel and radio frequency sputtering route. The bilayered BFO/BNBT thin film with (110) orientation and dense texture exhibits excellent ferroelectric and dielectric behavior (e.g., 2Pr∼79.7 μC/cm2, 2Ec∼772.6 kV/cm, εr∼178, and tan δ∼0.03), together with a long fatigue endurance up to 1×1010 switching cycles, while the desired magnetic behavior is well retained. Impedance study suggested that the second ionization of oxygen vacancies was involved in the conduction of the bilayered BFO/BNBT thin film.

Using chemical solution approach on Pt/Ti/SiO2/Si substrates (1 − x)Ba(Zr0.2Ti0.8)O3–x(Ba0.7Ca0.3)TiO3 (BZT–BCT) ferroelectric thin films were prepared for the first time. Dense and crack‐free films with perovskite structure were obtained from appropriately produced precursor solution through a multiple spin‐coating process in which the individual layers were pyrolyzed at different temperatures. The effects of composition and annealing temperature on the resulting structure and properties were examined. The optimized BZT–BCT thin film exhibited a high dielectric constant of 2913 with a low dielectric loss of 0.06, and a high remnant polarization of 15.8 μC/cm2 with a large coercive field of 58 kV/cm, and an effective piezoelectric coefficient d33 of 71.7 pm/V under the substrate clamping. These properties are discussed in comparison with the bulk ceramic counterpart, and the results showed that the polarization rotation and strain were restricted to a large extent in the thin films.