Wearable pressure sensors with high sensitivity, broad dynamic response range and low detection limit are highly desirable to enable the applications in electronic skins and soft robotics. In this work, we report a high-performance wearable pressure sensor based on microstructured polydimethylsiloxane (PDMS)/Ag and rough polyimide (PI)/Au interdigital electrodes. By tailoring the touchpoints, the resulting pressure sensors show ultrahigh sensitivity (259.32 kPa -1 ), broad dynamic response range (54 kPa) and low detection limit (0.36 Pa). We also systematically investigate the effect of different sensor structural configurations, PDMS geometrical feature, and Ag thickness on the performance of the pressure sensors. Thanks to these merits, the fabricated pressure sensor is capable of real-time monitoring pulse wave, and can act as a part of the mechanical hand to detect weak pressure changes, leading to the great application promise in the fields of biomedical, real-time health monitoring and intelligent robot.

PL, AS and DLCP have been performed to study the limitation factors for the performance of CZTS solar cells.

Cubic-phase CsPbI quantum dots (QDs) have been recently synthesized with merits of excellent optoelectronic performance. However, vital properties of cubic CsPbI including lattice dynamics and stability at high temperature remain poorly explored. We fabricate cubic CsPbI QDs and study their lattice dynamic and thermal stability to 700 K. We obtain Raman modes of cubic CsPbI QDs from 300 to 500 K at ultra-low-frequency range down to 15 cm, consistent with first-principles calculations. Above 550 K, the modification of Raman features suggests sample degradation. Consistently, temperature-dependent photoluminescence measurements indicate the absence of other luminescence phases up to 700 K. With increasing temperature, the CsPbI QD photoluminescence peak has a blue shift with exponentially decreasing intensity, showing faster electronic degradation than structural degradation. Our work provides detailed investigation of CsPbI QD lattice dynamics, band gap, and their high-temperature behavior, potentially useful for their emerging optoelectronic applications.