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In this paper, the authors have reported the improved surface stability studies of porous silicon by depositing metal (Ag) nanoparticles followed by electrochemical anodization of silicon to make it porous. The root cause for surface degradation of porous silicon is passivation of Si-H x bonds with oxygen termination and its replacement by Si-Ag bonds seems to have eradicated the degradation factor to a great extent. The surface quality has been checked periodically and any noticeable degradation is not observed in PS sample with Si-Ag bonds for one year. The qualitative analysis of the surface morphology (microstructure) was analyzed by scanning electron microscope (SEM) fitted with Energy-dispersive X-ray spectrometer (EDX In this report, authors have carried out the two step method viz chemical followed by electrochemical method on the PS samples to prepare Si-Ag bonds on the PS surface. The sample was then investigated through scanning electron microscope (SEM), microRaman, Photoluminescence (PL), Energy-dispersive X-ray spectroscopy (EDX) and Fourier Transform Infrared (FTIR) spectroscopy. The results show no surface degradation even after one year.