This work presents a new method to improve the field emission (FE) properties of semiconductors decorated with low-cost graphene oxide (GO) nanosheets and trace amounts of noble metal. The Ag/GO/ZnO composite emitter exhibited efficient FE properties with a low turn-on field of 1.4 V μm(-1) and a high field enhancement factor of 7018. The excellent FE properties of the Ag/GO/ZnO composite can be attributed to the tunneling effect of electrons through the heterojunction. The FE properties of the Ag/GO/ZnO composite are slightly better than those of the Ag/ZnO composite which forms an energy well that collects electrons on interfaces when an electric field is applied. This behavior is associated with heterostructures that offer more contact points and protrusions between ZnO nanowire arrays (NWAs) and Ag/GO, which leads to easier electron transfer. High-resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy (XPS) were employed to characterise the connection and evolution of the ZnO NWAs and Ag/GO composites.

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ZnO-CdS, ZnO-ZnS, and ZnO-Ag2S core-shell heterojunction structures were fabricated using low-temperature, facile and simple aqueous solution approaches. The polycrystalline sulfide shells effectively enhance the field emission (FE) properties of ZnO nanowires arrays (NWAs). This results from the formation of the staggered gap heterointerface (ZnO-sulfide) which could lead to an energy well at the interfaces. Hence, electrons can be collected when an electric field is applied. It is observed that ZnO-ZnS NWAs have the lowest turn-on field (3.0 Vμm−1), compared with ZnO-CdS NWAs (6.3 Vμm−1) and ZnO-Ag2S NWAs (5.0 Vμm−1). This may be associated with the pyramid-like ZnS shell which increases the number of emission nanotips. Moreover, the Fowler-Nordheim (F-N) plot displays a nonlinear relationship in the low and high electric field regions caused by the double well potential effect of the heterojunction structures.

A simple approach to Ag2S quantum dot (QD) modification was used to tune the field emission (FE) properties of ZnO nanowire arrays (NWAs). By a simple and facile successive ionic layer adsorption and reaction (SILAR) approach, Ag2S QDs were uniformly and densely packed on ZnO nanowires (NWs) to form ZnO-Ag2S core-shell heterojunction structures. The FE properties of ZnO NWAs were effectively tuned by controlling the amount of Ag2S QDs. The turn-on field first reduces and then increases as the amount of Ag2S QDs increases, while the trend of the field-enhancement factor is inverse. This is attributed to the clustering of Ag2S QDs into nanoparticles (NPs) which cover the nanowire tips, as SILAR cycles increase.