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An improved wideband common-gate (CG) and common-source (CS) CMOS LNA with noise cancellation is proposed. The cross-coupled feedback between the CG input transistor and the cascode transistor of CS input stage is used to increase the input transconductance of the LNA. And the bulk effect of CS input transistors is utilized to enhance g m -boosting coefficient. Thus, comparable gain and noise are achieved by reduced bias currents of the LNA while the resulted additional NF degradation is negligible. Fabricated in a 0.13 μm RF CMOS process, the LNA achieves a flat voltage gain of 18 dB, an NF of 2.7~3.2 dB, and an IIP3 of -4.5~-7.4 dBm over a 3 dB bandwidth of 0.1~4.4 GHz. It consumes only 4.1 mA from a 1 V supply and occupies an area of 520 × 490 um 2 . In contrast to those of reported wideband LNAs, the proposed LNA has the merit of lower power consumption and lower supply voltage.