An asymmetrical three state switching boost (TSSB) converter combining the benefits of magnetic coupling and voltage multiplier techniques is presented in this paper. The derivation procedure for the proposed topology is depicted. The new converter can achieve very high voltage gain and very low voltage stress on the power devices without high turn ratio and extreme duty cycles. Thus, the low voltage rated MOSFETs with low resistance rDS(ON) can be selected to reduce the switching losses and cost. Moreover, the usage of voltage multiplier technique not only raises the voltage gain but also offers lossless passive clamp performance, so the voltage spikes across the main switches are alleviated and the leakage-inductor energy of the coupled-inductors can be recycled; Also, the interleaved structure is employed in the input side, which not only reduces the current stress through each power switch, but also constrains the input current ripple. In addition, the reverse-recovery problem of the diodes is alleviated, and the efficiency can be further improved. The operating principles and the steady-state analysis of the presented converter are discussed in detail. Finally, a prototype circuit with 400W nominal rating is implemented in the laboratory to verify the performance of the proposed converter.Index Term-Three state switching high gain boost converter magnetic coupling voltage multiplier. Manuscript

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