Significance
Density functional theory (DFT) is successful in predicting a wide variety of material properties, but its use for electronic and optical properties has been hampered by its poor prediction of the band gap of a material. Here we provide a method, within the rigorous framework of generalized Kohn–Sham theory, that can accurately predict the band gap of a material, to within experimental uncertainty, using a specific class of density functionals called range-separated hybrid functionals. This method employs an orbital localization procedure to nonempirically select system-specific parameters of the hybrid functional. We expect the approach to be useful in predicting other electronic and optical properties of interest.
The dependence of ab initio many-body perturbation theory within the GW approximation on the eigensystem used in calculating quasiparticle corrections limits this method's predictive power. Here, we investigate the accuracy of the recently developed Wannier-localized optimally tuned screened range-separated hybrid (WOT-SRSH) functional as a generalized Kohn-Sham starting point for single-shot GW (G 0 W 0 ) calculations for a range of semiconductors and insulators. Comparison to calculations based on well-established functionals, namely, PBE, PBE0, and HSE, as well as to self-consistent GW schemes and to experiment, shows that band gaps computed via G 0 W 0 @WOT-SRSH have a level of precision and accuracy that is comparable to that of more advanced methods such as quasiparticle self-consistent GW and eigenvalue self-consistent GW . We also find that G 0 W 0 @WOT-SRSH improves the description of states deeper in the valence band manifold. Finally, we show that G 0 W 0 @WOT-SRSH significantly reduces the sensitivity of computed band gaps to ambiguities in the underlying WOT-SRSH tuning procedure.
The accurate prediction of the band gaps of halide perovskites within density functional theory is known to be challenging. The recently developed Wannier-localized optimally tuned screened range-separated hybrid functional was shown to be highly accurate for fundamental band gaps of standard semiconductors and insulators. This was achieved by selecting the parameters of the functional to satisfy an ansatz that generalizes the ionization potential theorem to the removal of charge from a state that corresponds to a Wannier function. Here, we present applications of the method to the band gaps of typical halide perovskites. We find a satisfyingly small formal mean absolute error of ∼0.1 eV with respect to experimental band gaps and very good agreement with previous many-body perturbation theory calculations.
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