In this paper we expound on the procedure of determining the pulse tolerable voltage characteristic in the voltage-versus-time frame, by applying the time enlargement law to the breakdown time random variable, and using a single statistical sample for this variable, obtained through experiments with a predefined shape of the voltage load. The suggested algorithm has been experimentally tested for Ar, N 2 , and SF 6 gases, in the pd product (pressure  interelectrode gap) range from 10 À4 to 300 bar mm. The testing was performed by comparing the pulse tolerable voltage characteristic of a two-electrode configuration obtained by applying a particular shape of the pulse voltage load with the values corresponding to other pulse voltage shapes, covering a wide range of frequencies. Satisfactory results have been obtained concerning the applicability of the procedure, with certain minor limitations, which are pointed out.

Investigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-ray beams as well as gamma-ray irradiation of60Co in the dose range from 1 to 5 Gy was performed in this paper. The response followed on the basis of threshold voltage shift and was studied as a function of absorbed dose. It was shown that the most significant change in threshold voltage was in the case of MOSFET irradiation in X-ray fields of 200 kV and when the gate voltage was +5 V. For practical applications in dosimetry, the sensitivity of the investigated MOSFETs was also satisfactory for X-ray tube voltage of 280 kV and for gamma rays. Possible processes in gate oxide caused by radiation and its impact on the response of MOSFETs were also analyzed in this paper.

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