The effect of displacement defect on SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) due to radiation is investigated using technology computer-aided design (TCAD) simulation. The position, energy level, and concentration of the displacement defect are considered as variables. The transfer characteristics, breakdown voltage, and energy loss of a double-pulse switching test circuit are analyzed. Compared with the shallow defect energy level, the deepest defect energy level with EC − 1.55 eV exhibits considerable degradation. The on-current decreases by 54% and on-resistance increases by 293% due to the displacement defect generated at the parasitic junction field-effect transistor (JFET) region next to the P-well. Due to the existence of a defect in the drift region, the breakdown voltage increased up to 21 V. In the double-pulse switching test, the impact of displacement defect on the power loss of SiC MOSFETs is negligible.

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Silicon displacement defects are caused by various effects. For instance, epitaxial crystalline silicon growth and ion implantation often result in defects induced by the fabrication process, whereas displacement damage is induced by terrestrial cosmic radiation. Clustered displacement damage reportedly reduces the on-state current (Ion) in ordinary MOSFETs. In the case of an extremely scaled device such as a nanosheet field-effect transistor (NS-FET), the impact of displacement defect size was analyzed on the basis of the NS dimensions related to the device characteristics. In this study, we investigated the effect of displacement defects on NS-FETs using technology computer-aided design; the simulation model included quantum transport effects. The geometrical conditions, temperatures, trap concentrations, and scattering models were considered as the variables for on-state current reduction.