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Using weak beam electron microscopy the stacking fault energy (SFE) of III‐V compounds is determined by measuring the dissociation width of edge dislocations. The SFE corrected for the lattice parameters is given in meV/atom for GaAs, GaP, GaSb, InAs, InP, and InSb. As expected there is a strong correlation of the SFE with the ionicity of the bond. The different plasticity of the compounds is traced back to different dislocation velocities.

Atomic resolution electron microscopy has been used to obtain images of moving dislocation kinks on partial dislocations at 600 ± C in silicon. Video difference images are used to obtain direct estimates of kink velocity. Observations of kink delay at obstacles, thought to be oxygen atoms at the dislocation core, yield unpinning energies and parameters of the obstacle theory of kink motion. The kink formation energy is obtained from the distribution of kink pair separations in low-dose images and is compared to the kink migration energy. Unlike metals, kink migration rather than formation controls the velocity of unobstructed dislocations in silicon under these experimental conditions. [S0031-9007(96)01391-9]