Single crystal Zn 3 N 2 films with (100) orientation have been grown by plasma-assisted molecular beam epitaxy on MgO and A-plane sapphire substrates with in situ optical reflectance monitoring of the growth. The optical bandgap was found to be 1.25-1.28 eV and an electron Hall mobility as high as 395 cm 2 V −1 s −1 was measured. The films were n-type with carrier concentrations in the 10 18 -10 19 cm −3 range.
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