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Based on the dielectric continuum model, we have studied the electron-optical phonon scattering rates in GaAs/Al x Ga 1Ϫx As quantum wells with different structure parameters. It was found that the scattering rate of the symmetric interface phonon mode has a stronger dependence on the Al composition in the barriers than that of the confined mode. The effective phonon energy emitted by hot electrons in GaAs/Al x Ga 1Ϫx As quantum wells with various Al compositions was estimated and the calculated value agrees with the experimental results qualitatively. For the dependence on the well width, scattering rates of the Sϩ mode drop considerably as the well width is increased. The dependence of the electron-optical phonon interaction on structure parameters can be clearly explained by the H and G factors defined in the article.

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