Millimeter wave radiation-induced magneto-resistance oscillations are examined in the GaAs/AlGaAs 2D electron system under bichromatic excitation in order to study the evolution of the oscillatory diagonal magnetoresistance, Rxx as the millimeter wave intensity is changed systematically for various frequency combinations. The results indicate that at low magnetic fields, the lower frequency millimeter wave excitation sets the observed Rxx response, as the higher frequency millimeter wave component determines the Rxx response at higher magnetic fields. The observations are qualitatively explained in terms of the order of the involved transitions. The results are also modeled using the radiation-driven electron orbit theory.

Abstract. Remotely sensed microwave reflection was measured concurrently with standard magnetotransport in photo-excited high mobility GaAs/AlGaAs heterostructure. Experiments indicate strong reflection resonance on both sides of the magnetic field axis for linearly polarized microwave/terahertz photo-excitation over the examined frequency 30 < f < 330 GHz band. In addition, there is evidence for electronic heating in the vicinity of cyclotron resonance (CR), which is indicated by reduced amplitude of the Shubnikov-de Haas oscillations. Effective mass extracted from the measurements was found to equal the CR mass within experimental error.

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