For mercury-free fluorescent lamps and plasma display panels, alternative luminescent materials are required for the efficient conversion of vacuum ultraviolet radiation to visible light. Quantum cutting involving the emission of two visible photons for each vacuum ultraviolet photon absorbed is demonstrated in Eu3+-doped LiGdF4 with the concept of downconversion. Upon excitation of Gd3+ with a high-energy photon, two visible photons can be emitted by Eu3+ through an efficient two-step energy transfer from Gd3+ to Eu3+, with a quantum efficiency that approaches 200 percent.
The phase behavior of three N-alkyl-substituted perylene diimide derivatives is examined by differential scanning calorimetry and polarized optical microscopy. The occurrence of multiple phase transitions indicates several crystalline and several liquid crystalline phases. X-ray diffraction measurements show that the liquid crystalline phases display high structural ordering in all three dimensions: smectic layers are formed, and within these smectic layers an additional ordering in columns is observed. Molecular modeling confirms this result and substantiates smectic ordering with interdigitating alkyl chains that determine the distance between the smectic layers. The ordering in columns is favored by π-π interactions between the cofacially oriented perylene molecules and by the elliptic shape of the molecule. Finally, intermolecular dipole-dipole interactions between the carbonyl groups of the imide moieties cause the perylene molecules to orient on average with a slight rotation between neighboring molecules within a columnar stack. Following the determination of the electronic transition dipole moment, this orientation, which still involves substantial π-π interactions, could be confirmed by UV/vis spectroscopy of perylene aggregates. To gauge the potential of these materials as organic semiconductors, the charge carrier mobility of one of the perylene derivatives has been measured by pulse-radiolysis time-resolved microwave conductivity. A value in excess of 0.1 cm 2 V -1 s -1 is found in the liquid crystalline phase, and a value in excess of 0.2 cm 2 V -1 s -1 is found for the crystalline phase. These values are comparable with the highest values previously found for other discotic materials.
An easy and reliable method to extract the crystalline fractions in microcrystalline films is proposed. The method is shown to overcome, in a natural way, the inconsistencies that arise from the regular peak fitting routines. We subtract a scaled Raman spectrum that was obtained from an amorphous silicon film from the Raman spectrum of the microcrystalline silicon film. This subtraction leaves us with the Raman spectrum of the crystalline part of the microcrystalline film and the crystalline fraction can be determined. We apply this method to a series of samples covering the transition regime from amorphous to microcrystalline silicon. The crystalline fractions show good agreement with x-ray diffraction (XRD) results, in contrast to crystalline fractions obtained by the fitting of Gaussian line profiles applied to the same Raman spectra. The spectral line shape of the crystalline contribution to the Raman spectrum shows a clear asymmetry, an observation in agreement with model calculations reported previously. The varying width of this asymmetrical peak is shown to correlate with the mean crystallite size as determined from XRD spectra.
A systematic spectroscopic study of the 4 f 7 energy levels of Gd 3ϩ in LiYF 4 in the vacuum-ultraviolet spectral region (50 000-70 000 cm Ϫ1) is reported. Using energy-level calculations, all observed spectral lines could be assigned to free-ion term symbols ͑including term symbols with unusually high L and J, e.g., a 2 Q 23/2 level around 67 000 cm Ϫ1 ͒. From the 6 G J levels around 50 000 cm Ϫ1 quantum cutting ͑or two-photon luminescence, photon-cascade emission͒ is observed: the emission of a red photon due to the 6 G J → 6 P J transition is followed by the emission of an ultraviolet photon due to the 6 P J → 8 S 7/2 transition.
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