Es wird uber zwei Herstellungsverfahren fur Wismutoxid-Aufdampfschichten berichtct. Die nach beiden Verfahren, dem Diffusionsverfahren und der Elektronenstrahlverdampfung, hergestellten Schichten sind in ihren physikalischen Eigenschaften weitgehcnd gleicli. Durch Rontgenstrukturuntersuchungen wird gezeigt., daB in den Schichten die cc-Modifikation des Bi,O, vorliegt. Aus der Messung der Temperaturabhangigkeit der elektrischen Leitfahigkeit sowie aus Reflexions-und Durchlassigkeitsmessungen erhalt man fur den direkten optischen Bandabstand einen Energiewert von 2.91 eV und fur indirekte Bandubergange (optische und thermische) Energiewerte von 2,60 und 2,15 eV. Da iiber die Bandstruktur des Wismutoxides nichts bekannt ist, konnen eindeutige Zuordnungen der Valenz-Leitungsband-Ubergiinge nicht gemacht werden.Two methods to produce Bi,O, layers by evaporation are described: the so-called diffusion method and the electron-beam evaporation method. Both kinds of layers have similar physical properties. X-ray diffraction shows the layers to consist of the a-modification of Bi,O,. Measurements of the dependence of electrical conductivity on temperature as well as transmission and reflection measurements indicate band gaps of 2.91 eV for direct optical transitions and of 2.60 and 2.15 eV (optical and thermal results, respectively) for indirect transitions. Definite correlations of these band gaps to transitions between valence and conduction bands could not be established since the band struct,ure of Bi,O, is still unknown.
The type of conductivity of pure Bi,Os layers is determined by the change of conductivity under the influence of chemisorbed oxygen. The spectral photoconductive sensitivity is measured on undoped and doped Bi,O, layers within the range of 0.8 to 3.5 eV. The time constant of the photoelectric effect of pure Bi,O, layers can be reduced b y photoadsorption of oxygen. A sulfur or selenium doping of the layers causes a shift of the wavelength limit towards the near infra-red. The time constant is greatly reduced.
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