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This article describes how a scanning SQUID microscope (SSM) enhances the capability of device-level fault isolation on advanced 90 nm and 65 nm flip-chip microprocessor devices. SSM has proved to be very useful in isolating bump shorts and shorts in copper interconnects. For improved resolution and analyzing bumped dies, a front-side SSM technique is developed that has greatly increased success rates and analysis turn-around time. In this paper, we focus on die-level fault isolation on advanced microprocessor devices with numerous metal layers.

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