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Plasma doping has been explored for many implant applications for over two decades and is now being used in semiconductor manufacturing for two applications: DRAM polysilicon counter-doping and contact doping. Recently it has become an attractive implant technique for multiple gate and FinFET devices, since the directionality of the conventional beam-line implant processes used to form the source and drain junctions in planar devices is not well suited for use on non-planar devices. In this paper, we investigate the use of plasma doping to dope the sidewalls of fins, with particular attention to the dopant uniformity and residual damage after anneal.

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