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The presence of sodium, either in the substrate or as a co-evaporant during absorber deposition, has been shown to improve the performance of polycrystalline photovoltaic devices made with Cu(In, Ga)Se(2), as well as the ternary CuInSe(2). Investigations have shown Na or Na compounds deposited on the grain boundaries, but none have been found within intact crystal grains, leading to suggestions that grain boundaries may play a role in the improved performance of the cells. Therefore, in this study, ingots containing large monocrystals of CuInSe(2) have been grown, using a vertical-Bridgman method, from melts that also include a varying quantity of sodium. In order to simulate the conditions under which cells are constructed, a proportion of Se above stoichiometry has been added to some of the melts. Resistivity and Hall effect measurements were then performed on the material after growth. The results show no large change in either resistivity or majority hole concentration in either set of samples, although a slight decrease in the latter value was apparent in the excess Se samples with 0.2 and 0.3 at.% Na additions. No clear trend in hole mobility could be discerned, although an increase was seen with 0.2 at.% Na addition for both samples.

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