Spin-dependent conduction in metals underlies all modern magnetic memory technologies, such as giant magnetoresistance (GMR). The charge current in ferromagnetic transition metals is carried by two non-mixing populations of sp-band Fermi-level electrons: one of majority-spin and one of minority-spin. These electrons experience spin-dependent momentum scattering with localized electrons, which originate from the spin-split d-band. The direct observation of magnetotransport under such fundamental conditions, however, requires magnetotransport measurements on the same timescale as the electron momentum scattering, which takes place in the sub-100 fs regime. Using terahertz electromagnetic probes, we directly observe the magnetotransport in a metallic system under the fundamental conditions, and determine the spin-dependent densities and momentum scattering times of conduction electrons. We show that traditional measurements significantly underestimate the spin asymmetry in electron scattering, a key parameter responsible for effects such as GMR. Furthermore, we demonstrate the possibility of magnetic modulation of terahertz waves, along with heat- and contact-free GMR readout using ultrafast terahertz signals

We study the key domain wall properties in segmented nanowires loop-based structures used in domain wall based sensors. The two reasons for device failure, namely the distribution of domain wall propagation field (depinning) and the nucleation field are determined with Magneto-Optical Kerr Effect (MOKE) and Giant Magnetoresistance (GMR) measurements for thousands of elements to obtain significant statistics. Single layers of Ni81Fe19, a complete GMR stack with Co90Fe10/Ni81Fe19 as a free layer and a single layer of Co90Fe10 are deposited and industrially patterned to determine the influence of the shape anisotropy, the magneto-crystalline anisotropy, and the fabrication processes. We show that the propagation field is little influenced by the geometry but significantly by material parameters. Simulations for a realistic wire shape yield a curling mode type of the magnetization configuration close to the nucleation field. Nonetheless, we find that the domain wall nucleation fields can be described by a typical Stoner-Wohlfarth model related to the measured geometrical parameters of the wires and fitted by considering the process parameters. The GMR effect is subsequently measured in a substantial number of devices (3000), in order to accurately gauge the variation between devices. This reveals a corrected upper limit to the nucleation fields of the sensors that can be exploited for fast characterization of working elements.

Ion projection facilitates a direct structuring, which Is an attractive potential manufacturing process for patterned storage media. An advantage to this method is that the media roughness remaines unchanged. The feasibility of ion projection direct structuring for processing full disk surfaces was investigated using a next generation lithography projector. Co-Pt multilayer films with strong perpendicular anisotropy were deposited on 1-in glass disks as used in the IBM microdrive and on Si substrates. Concentric tracks including data, as well as head positioning servo structures, were patterned in a single exposure step with 45 keV He+ at a 4 x demagnification. In a second experiment, sub-100-nm magnetic islands were produced using projection at 8.7 x demagnification and visualized by magnetic force microscopy

We develop and analyze an advanced concept for a domain-wall-based sensing of rotations. Moving domain walls in n closed loops with n − 1 intersecting convolutions by rotating fields, we are able to sense n rotations. By combining loops with coprime numbers of rotations, we create a sensor system allowing for the total counting of millions of turns of a rotating applied magnetic field. We analyze the operation of the sensor and identify the intersecting cross structures as the critical component for reliable operation. Specifically, depending on the orientation of the applied field angle with the magnetization in the branches of the cross, a domain wall is found to propagate in an unwanted direction, yielding failures and counting errors in the device. To overcome this limiting factor, we introduce a specially designed syphon structure to the controlled pinning of the domain wall before the cross and depinning and propagation only for a selected range of applied field angles. By adjusting the syphon and the cross geometry, we find that the optimized combination of both structures prevents failures in the full sensor structure yielding robust operation. Our modeling results show that the optimized element geometry allows for the realization of the sensor with cross-shaped intersections and an operation that is tolerant to inaccuracies of the fabrication.

We study microwave assisted magnetization reversal of elliptical Ni81Fe19 thin film elements employing Kerr microscopy. A microwave field is applied along the short axis of the element and orthogonally to a quasistatic magnetic field, which is parallel to the long axis of the element. The reversal process is characterized by the formation of a complex multidomain structure. We demonstrate that the reversal process in total is compressed by applying a sufficiently high microwave field, which assists to overcome the effective energy barrier of the domain nucleation, and thus reduces the coercive field.