A reconfigurable U-shaped tunnel field-effect transistor (RUT-FET) is proposed as a low-power dynamically programmable logic device. It has several advantages over conventional reconfigurable TFETs: 1) Excellent scalability without any degradation of subthreshold swing (SS) and draininduced barrier thinning (DIBT) with recessed channel structure. 2) High current drivability with increased band-to-band tunneling junction 3) Scaling of SS with tunneling barrier width defined by geometrical parameters. In this manuscript, its electrical characteristics are examined by technology computer-aided design (TCAD) simulation. It shows ∼30× higher ON-state current than control devices and 41.8 mV/dec-SS during drain current increase by five orders magnitude. The reconfigurable operations for nand p-type FETs are also discussed.

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