The 90° domain switching in single crystalline BaTiO3 under an external static electric field has been investigated by in situ transmission electron microscopy using a special homemade transmission electron microscope stage. With the initial domains gradually disappearing, new domains that are 90° away from the initial ones are observed to occur with polarizations being switched to the direction of the external electric field, and domain boundaries being changed from ⟨101⟩ to ⟨1¯01⟩ in order to maintain a “head-to-tail” arrangement.

In this letter we report the characterization of local compressive strain in p-type strained-silicon channel metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction. The compressive strain was induced into the channel region of gate length of 80nm strained-Si p-type metal-oxide-semiconductor field effect transistor by Ge preamorphization implantation for source/drain extension. A method to distinguish between compressive strain and shear strain in the cross-sectional transmission electron microscopy specimens is proposed.