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We have obtained analytical expressions for the q-dependent static spin susceptibility of monolayer transition metal dichalcogenides, considering both the electron-doped and hole-doped cases. Our results are applied to calculate spin-related physical observables of monolayer MoS2, focusing especially on in-plane/out-of-plane anisotropies. We find that the hole-mediated RKKY exchange interaction for in-plane impurity-spin components decays with the power law R −5/2 as a function of distance R, which deviates from the R −2 power law normally exhibited by a two-dimensional Fermi liquid. In contrast, the out-of-plane spin response shows the familiar R −2 long-range behavior. We also use the spin susceptibility to define a collective g-factor for hole-doped MoS2 systems and discuss its density-dependent anisotropy.

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We consider a quantum particle in a one-dimensional disordered lattice with Anderson localization, in the presence of multi-frequency perturbations of the onsite energies. Using the Floquet representation, we transform the eigenvalue problem into a Wannier-Stark basis. Each frequency component contributes either to a single channel or a multi-channel connectivity along the lattice, depending on the control parameters. The single channel regime is essentially equivalent to the undriven case. The multi-channel driving substantially increases the localization length for slow driving, showing two different scaling regimes of weak and strong driving, yet the localization length stays finite for a finite number of frequency components.