We present the results of our calculation of the effects of dynamical coupling of a charge-carrier to the electronic polarization and the field-induced lattice displacements at the gate-interface of an organic field-effect transistor (OFET). We find that these interactions reduce the effective bandwidth of the charge-carrier in the quasi-two dimensional channel of a pentacene transistor by a factor of two from its bulk value when the gate is a high-permittivity dielectric such as (Ta 2 O 5 ) while this reduction essentially vanishes using a polymer gate-insulator. These results demonstrate that carrier mass renormalization triggers the dielectric effects on the mobility reported recently in OFETs.

We develop a new three-dimensional multiparticle Monte Carlo (3DmpMC) approach in order to study the hopping charge transport in disordered organic molecular media. The approach is applied here to study the charge transport across an energetically disordered organic molecular heterojunction, known to strongly influence the characteristics of the multilayer devices based on thin organic films. The role of energetic disorder and its spatial correlations, known to govern the transport in the bulk, are examined here for the bilayer homopolar system where the heterojunction represents the bottleneck for the transport. We study the effects of disorder on both sides of the heterojunction, the effects of the spatial correlation within each material and among the layers. Most importantly, the 3DmpMC approach permits us to treat correctly the effects of the Coulomb interaction among carriers in the region where the charge accumulation in the device is particularly important and the Coulomb interaction most pronounced. The Coulomb interaction enhances the current by increasing the electric field at the heterojunction as well as by affecting the thermalization of the carriers in front of the barrier. Our MC simulations are supplemented by the master equation (ME) calculations in order to build a rather comprehensive picture of the hopping transport over the homopolar heterojunction.

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Applying this method to the standard OLED device structure that has received broad attention in the literature, we have found a number of surprising results. From our experiments, we have demonstrated that the average electric field inside the hole transport layer is larger than or equal to the average field in the emission layer over the entire current range. The device simulations fully clarify the situation, giving insight into the space charge effects as well as the hole and the electron current distributions in the device. In particular, we found that there is a leakage of unrecombined holes towards the cathode at low voltages. We also found a strong variation of the electric field in the Alq3 layer due to space charge effects. By using the laser dye derivatives DCM‐TPA with electron trapping capabilities and DCM‐II with both electron and hole trapping capabilities as dopants in a standard OLED architecture, we could study the effect on transport and emission characteristics. In the case of the exclusively electron trapping dopant, a blue‐shift of the emission color with increasing bias is observed which we find is due to a splitting of the recombination zone.Applying this method to the standard OLED device structure that has received broad attention in the literature, we have found a number of surprising results. From our experiments, we have demonstrated that the average electric field inside the hole transport layer is larger than or equal to the average field in the emission layer over the entire current range. The device simulations fully clarify the situation, giving insight into the space charge effects as well as the hole and the electron current distributions in the device. In particular, we found that there is a leakage of unrecombined holes towards the cathode at low voltages. We also found a strong variation of the electric field in the Alq3 layer due to space charge effects. By using the laser dye derivatives DCM‐TPA with electron trapping capabilities and DCM‐II with both electron and hole trapping capabilities as dopants in a standard OLED architecture, we could study the effect on transport and emission characteristics. In the case of the exclusively electron trapping dopant, a blue‐shift of the emission color with increasing bias is observed which we find is due to a splitting of the recombination zone.

Recent analysis of the excitation of dust Bernstein–Greene–Kruskal modes [Tribeche et al., Phys. Plasmas 7, 4013 (2000)] is extended to include self-consistently the dust charge variation. The grain charge becomes a new self-consistent dynamical variable, leading to some new and interesting results such as threshold lowering, mode damping, and spatially localized nonlinear structures.