Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.

No abstract

We report on an analysis of hot-carrier lifetimes from electron-phonon interaction in lead iodide perovskites using first-principles calculations. Our calculations show that the holes in CsPbI3 have very long lifetimes in the valence band region situated 0.6 eV below the top of the valence band. On the other hand, no long lifetime is predicted in PbI3(-). These different results reflect the different electronic density of states (DOSs) in the valence bands, that is, a small DOS for the former structure while a sharp DOS peak for the latter structure. We propose a reduction of the relaxation paths in the small valence DOS as being the origin of the slow hot-hole cooling. Analyzing the generalized Eliashberg functions, we predict that different perovskite A-site cations do not have an impact on the carrier decay mechanism. The similarity between the DOS structures of CsPbI3 and CH3NH3PbI3 enables us to extend the description of the decay mechanism of fully inorganic CsPbI3 to its organic-inorganic counterpart, CH3NH3PbI3.

No abstract