The magnetic properties of a p-type ZnMnO diluted magnetic semiconductor quantum well are investigated by a numerical self-consistent field calculation taking into account the spin-exchange interaction between free carriers and magnetic impurities and the carrier exchange-correlation interaction based on the mean field theory of carrier-induced ferromagnetism. The dependence of the carrier spin polarization on magnetic impurity density and the spin-exchange interaction energy is presented in comparison with well-known III-V-based diluted magnetic semiconductors. The results show that room temperature operation of ZnMnO-based spin devices is probably easier than that of any other materials investigated with the same numerical method.

In search of novel, improved materials for magnetic data storage and spintronic devices, compounds that allow a tailoring of magnetic domain shapes and sizes are essential. Good candidates are materials with intrinsic anisotropies or competing interactions, as they are prone to host various domain phases that can be easily and precisely selected by external tuning parameters such as temperature and magnetic field. Here, we utilize vector magnetic fields to visualize directly the magnetic anisotropy in the uniaxial ferromagnet CeRu2Ga2B. We demonstrate a feasible control both globally and locally of domain shapes and sizes by the external field as well as a smooth transition from single stripe to bubble domains, which opens the door to future applications based on magnetic domain tailoring.