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We report the characterization of a set of broad-area semiconductor diode lasers with mid-wave infrared (3–5 μm) emission wavelengths. The active region of each laser structure is a 5- or 6-period multiple quantum well (MQW) with Ga0.75In0.25As0.22Sb0.78 barriers and type-II (broken-gap) Ga0.75In0.25Sb/InAs superlattice wells. The cladding layers of each laser structure are n- and p-type InAs/AlSb (24 Å /24 Å) superlattices grown lattice-matched to a GaSb substrate. By tailoring constituent layer thicknesses in the Ga0.75In0.25Sb/InAs superlattice wells, laser emission wavelengths ranging from 3.28 μm (maximum operating temperature=170 K) to 3.90 μm (maximum operating temperature=84 K) are obtained.

Ion implantation and proton−enhanced diffusion in semiconductorsThe formation of a phosphorus or boron impurity peak in silicon has been observed following irradiation with monoenergetic protons. In this study we used a sample temperature of 700'C, proton-beam energies of 50-140 keY, proton-beam current densities of -I pA/cm 2 , and proton-bombardment times of 3 min to 3 h. The resultant impurity profiles were obtained using Schottky-barrier differential C -V techniques.

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