The planes occurring at convex corners during anisotropic etching of (100)-silicon in aqueousKOH were identified as {411}-planes, with the help of a specially developed measuring technique. The etching rate of these planes in relation to the rate of the {100}-planes declines with increasing potassium hydroxide concentration. In contrast, the temperature dependence of this etch rate ratio is negligible in the relevant range between 60~ and 100~ Based on these results, special structures suited for the compensation of the undercutting in the case of very narrow contours were developed. With the help of these structures it is feasible to realize, for instance, bent V-grooves or structures with a very low ratio between lateral expansion and etching depth, e.g., a discrete pyramid-trunk with minimum dimensions on the wafer surface. This offers access to completely new applications, among others spiral channels with double-sided anisotropic etching for micro-

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This paper describes the state of the art as well as demands and a concept for CAD tools supporting fast prototyping of microelectromechanical systems (MEMS). Based on commercial tools available in several engineering sciences, a more general simulator has to be developed. In future simulation tools, a general manager has to consider an interactive communication on different levels.