Strain dependent stabilization of metallic paramagnetic state in epitaxial NdNiO3 thin films Appl. Phys. Lett. 101, 132101 (2012) Residual stresses and clamped thermal expansion in LiNbO3 and LiTaO3 thin films Appl. Phys. Lett. 101, 122902 (2012) Tribological properties of nanocrystalline diamond films deposited by hot filament chemical vapor deposition AIP Advances 2, 032164 (2012) The combined effect of surface roughness and internal stresses on nanoindentation tests of polysilicon thin films Silicon dioxide thin films have been prepared by electron-gun evaporation under various deposition conditions. The residual stresses in SiOa films were determined by measurements of the radius of curvature of Si and Ge substrates. The composition and density of films were deduced from Rutherford backscattering spectroscopy and elastic recoil detection analyses. The films were found to be stoichiometric (Si/O=1/2) under the deposition conditions investigated. The compressive residual stresses in films deposited at the base pressure (2X 10e5 mbar) varied from -20 to -550 MPa as the substrate temperature increased from 20 to 285 "C. At a substrate temperature of 200 "C, the residual stresses varied from $70 to -180 MPa with decreasing oxygen pressure in the deposition chamber. The contribution of three types of stresses, namely thermal, intrinsic, and water-induced stresses, can be distinguished. The stress component resulting from the absorption of water molecules in porous SiO, films was obtained from variation of residual stresses caused by the changeover of samples from air to vacuum. The level of this stress component was dependent on the density of films. An evolution of residual stresses from compressive to tensile with time of sample storage in a conventional clean-room environment was measured for all evaporated SiOZ films investigated in this study. In addition, the hydrogen content in films increased progressively with increasing aging time in air. The kinetics of this stress evolution was considerably reduced when the films were stored in vacuum. The origin of residual stresses and the stress aging mechanism are discussed. 0 1995 American Institute of Physics.

Strain dependent stabilization of metallic paramagnetic state in epitaxial NdNiO3 thin films Appl. Phys. Lett. 101, 132101 (2012) Residual stresses and clamped thermal expansion in LiNbO3 and LiTaO3 thin films Appl. Phys. Lett. 101, 122902 (2012) Tribological properties of nanocrystalline diamond films deposited by hot filament chemical vapor deposition AIP Advances 2, 032164 (2012) The combined effect of surface roughness and internal stresses on nanoindentation tests of polysilicon thin films Deposition of silicon dioxide thin films on silicon, germanium, and glass substrates has been accomplished by electron gun evaporation under various experimental conditions. The level of compressive residual stresses in evaporated SiO 2 films determined just after deposition of films on Si or Ge substrates and the mass density of silica were found to be dependent on the substrate temperature and oxygen partial pressure in the evaporation chamber. Moreover, the intensity of compressive residual stresses decreased linearly as the logarithm of the exposure time of films to room air ͑aging time͒ was increased. After a compressive-tensile stress transition observed at a given aging time for films with relatively low densities, the intensity of tensile stresses continued to increase progressively with increasing aging time. The relative variation of residual stresses in SiO 2 films was dependent on the mass density of the deposited material. Since the intensity of the absorption band of Si-OH radicals in the infrared spectra of SiO 2 films exposed to room air increased with increasing aging time, the evolution of residual stresses was attributed to the effect of the hydration of silica by water vapor contained in room air. A reaction mechanism involving the physical adsorption of water vapor molecules on the SiO 2 surface and reaction between adspecies and Si-O-Si species is proposed and discussed to interpret the logarithmic kinetics of residual stress evolution in evaporated SiO 2 films exposed to room air.

No abstract

No abstract

No abstract