Herein, the Mn1.95-xCo0.21Ni0.84SrxO4 (MCNS) (0 ≤ x ≤ 0.15) based negative temperature coefficient (NTC) materials are prepared by co-precipitation method. The replacement of Mn by Sr plays a critical role in controlling the lattice parameter, relative density, microstructure and electrical properties. The lattice parameter and relative density increase with the increase of Sr content. A small amount of Sr restrains the grain growth and increases the bulk density. Moreover, the ρ25, B25/50, Ea and α values of MCNS ceramics are influenced by the Sr content and ranged from 1535.0-2053.6 Ω·cm, 3654-3709 K, 0.3149-0.3197 eV and -4.111--4.173%, respectively. The XPS results explain the transformation of MCNS ceramics from n- to p-type semiconductors. The conduction could arise from the hopping polaron between Mn3+/Mn4+ and Co2+/Co3+ in the octahedral sites. Furthermore, the aging coefficient (△R/R) of MCNS ceramics is found to be < 0.2%, which indicates the stable distribution of cations in the spinel. Finally, the MCNS ceramics demonstrate excellent thermal durability with <1.3% of resistance shift after 100 thermal shock cycles.
Herein, the Mn1.95-xCo0.21Ni0.84SrxO4 (MCNS) (0 ≤ x ≤ 0.15) based negative temperature coefficient (NTC) materials are prepared by co-precipitation method. The replacement of Mn by Sr plays a critical role in controlling the lattice parameter, relative density, microstructure and electrical properties. The lattice parameter and relative density increase with the increase of Sr content. A small amount of Sr restrains the grain growth and increases the bulk density. Moreover, the ρ25, B25/50, Ea and α values of MCNS ceramics are influenced by the Sr content and ranged from 1535.0-2053.6 Ω·cm, 3654-3709 K, 0.3149-0.3197 eV and -4.111--4.173%, respectively. The XPS results explain the transformation of MCNS ceramics from n- to p-type semiconductors. The conduction could arise from the hopping polaron between Mn3+/Mn4+ and Co2+/Co3+ in the octahedral sites. The impedance data analysis also discussed the conduction mechanism of the MCNS ceramic, while grain resistance dominates the whole resistance of the samples. Furthermore, the aging coefficient (△R/R) of MCNS ceramics is found to be < 0.2%, which indicates the stable distribution of cations in the spinel. Finally, the MCNS ceramics demonstrate excellent thermal durability with <1.3% of resistance shift after 100 thermal shock cycles.
Herein, the Mn1.95-xCo0.21Ni0.84SrxO4 (MCNS) (0 ≤ x ≤ 0.15) negative temperature coefficient (NTC) materials are prepared by co-precipitation method. The replacement of Mn by Sr plays a critical role in controlling the lattice parameter, relative density, microstructure and electrical properties. The lattice parameter and relatively density increase with the increase of Sr content. Moreover, a small amount of Sr retards the grain growth and increases the bulk density. Moreover, the ρ25, B25/50, Ea and α values of MCNS ceramics are influenced by the Sr content and ranged from 1535.0-2024.1 Ω•cm, 3654–3709 K, 0.3149–0.3197 eV and 4.111–4.173%, respectively. The XPS results explain the transformation of MCNS ceramics from n- to p-type semiconductors. Moreover, the aging coefficient (△R/R) of MCNS ceramics is found to be < 0.2%, which indicates the stable distribution of cations in the spinel. Finally, the MCNS ceramics demonstrate excellent thermal durability with < 1.3% of resistance shift after 100 thermal shock cycles.
There has recently been renewed interest in wearable devices and electronic skin because of the demand in real-time monitoring of human body temperature. This work developed a flexible paper-based temperature sensor by screen printing technology. The sensing layer is composed of Mn-Co-Ni metal oxide powders filled with Polyvinyl butyral (PVB). The flexible temperature sensor shows extremely high sensitivity (3.14%° C− 1) at human body temperature (25 to 45° C). It also exhibits excellent durability (less than 0.25%) during the long-term aging tests, which indicates that the flexible temperature sensor has great potential in wearable devices and electronic skin.
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