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We investigated the feasibility of the selective oxidation of AlGaAs for a novel laser diode (LD) made of two-dimensional photonic crystal (PC). The oxidation was successfully performed in an array of small and deep air holes without any unexpected phenomenon. The oxidation extent was uniform vertically and horizontally around the air holes. It was not affected by crystallographic orientation or steam gas flow direction. Thus, there are no significant difficulties in fabricating the device structures of the proposed PC-LD by selective oxidation.

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Dilute nitrides are novel III–V semiconductors that have been developed for photonic and electronic devices. Although they have been investigated, some of their characteristics have not been established yet. In this study, the static dielectric constant of dilute nitrides was experimentally estimated from the exciton binding energy. The results imply that nitrogen incorporation in III–V semiconductors decreases both the static dielectric constant and bandgap. This behavior is opposite to that of conventional semiconductors.

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