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High data rate E-band (71 GHz-76 GHz, 81 GHz -86 GHz, 92 GHz -95 GHz) communication systems will benefit from power amplifiers that are more than twice as powerful than commercially available GaAs pHEMT MMICs. We report development of three stage GaN MMIC power amplifiers for E-band radio applications that produce 500 mW of saturated output power in CW mode and have > 12 dB of associated power gain. The output power density from 300 μm output gate width GaN MMICs is seven times higher than the power density of commercially available GaAs pHEMT MMICs in this frequency range.Index Terms -AlGaN/GaN, millimeter-wave, PA, FET, GaN, MMIC, Radio.

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Unified analytical expressions predicting the locking range for fundamental, subharmonic ( = 2), superharmonic ( = 2), and parametric injection ( = = = 1) locking are presented and compared in this paper. Power series are employed to model the device nonlinearity. The -parameters, relating nonlinear I-V behavior, are extracted using a harmonic-balance approach. These expressions are verified using an UHF oscillator; and good agreement is obtained between the experimental and analytical results.