Quasi-one-dimensional electron gases (q1DEGs) have been obtained by fabricating LaAlO3 nanowires, using the technique of electrostatic spinning plus post annealing, above TiO2-terminated SrTiO3 substrate. The q1DEG exhibits an electronic transport behavior of variable range hopping with the one dimension characteristic. Visible light illumination produces a strong effect on transport process, depressing the resistance of the q1DEG by a factor up to 8. As expected, gating effect is weak at relative high temperatures, ∼3.2% at 150 K and 1.5% at 300 K under a back gate of 200 V. Aided by light illumination, however, the gating effect is 35-fold amplified, and the resistance increases under not only negative gates but also positive gates, different from the normal gating effect without illumination. Possible explanations for these phenomena are given.

Basing on conductive atomic force microscopy, we presented a direct conductance mapping for the interface of the La0.67Sr0.33MnO3/Nb:SrTiO3 hetero-junction. The most remarkable observation is the presence of an interfacial layer in Nb:SrTiO3 adjacent to the manganite film. Within this layer, the AFM tip/Nb:SrTiO3 contact shows a current-voltage dependence that strongly deviates from Shockley equation, unlike a Schottky diode. Spatial extension of this layer is explored and possible transport mechanism in or outside this interfacial layer is discussed. The present work gives a direct intuitional image on the interface of manganite junction. The principle proven here can be extended to other complex oxide interfaces.