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The sections in this article are Si–SiO 2 Interface Compound‐Semiconductor–Insulator Interfaces

The effects of incorporating low-temperature-grown GaAs (LT GaAs) into the layer structure of Al0.98Ga0.02As/GaAs are studied. Results show that the structures containing a 300 nm layer of LT GaAs have faster oxidation rates and lower oxidation temperatures compared to reference samples without the LT GaAs layer. This letter will discuss the mechanisms involved in the oxidation rate increase, attributed to the LT GaAs enhancing the transport of As species during the oxidation process.

The role of a low-temperature-grown GaAs (LT GaAs) layer on the lateral oxidation of an Al0.98Ga0.02As/GaAs layer structure has been studied by transmission electron microscopy. Results show that structures incorporating LT GaAs develop better quality oxide/GaAs interfaces compared to reference samples without LT GaAs. While the latter have As accumulation in the vicinity of these interfaces, the structures with LT layers display sharper oxide–GaAs interfaces with a reduced concentration of As. These results are explained in terms of the high Ga vacancy concentration in the LT GaAs and the possible influence of those vacancies in enhancing As diffusion away from the oxide–semiconductor interface.

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