We report the successful deposition of highly oriented CaBi2Nb2O9 (CBN) thin films directly on n+‐Si(100) substrates by pulsed laser deposition. The CBN thin films exhibited good structural, dielectric, and CBN/Si interface characteristics. The electrical measurements were conducted on CBN thin films in metal–ferroelectric–semiconductor (MFS) capacitor configuration. The typical measured small signal dielectric constant and dissipation factor at 100 kHz were 76.5 and 0.003, respectively, and were relatively unchanged with increasing frequency up to 1 MHz. The leakage current density was lower than 10—7 A/cm2 at an applied electric field of 100 kV/cm. The remanent polarization and the coercive field values were 3.6 μC/cm2 and 80 kV/cm, respectively, at an applied electric field of 460 kV/cm. No significant fatigue was observed at least up to 1010 switching cycles.

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