A midwave infrared camera ͑ c = 4.2 m͒ with a 320ϫ 256 focal plane array ͑FPA͒ based on type-II InAs/ GaSb strain layer superlattice ͑SLs͒ has been demonstrated. The detectors consist of an nBn heterostructure, wherein the SL absorber and contact layers are separated by a Al 0.2 Ga 0.8 Sb barrier layer, which is designed to have a minimum valence band offset. Unlike a PN junction, the size of the device is not defined by a mesa etch but confined by the lateral diffusion length of minority carriers. At 77 K, the FPA demonstrates a temporal noise equivalent temperature difference ͑NETD͒ of 23.8 mK ͑T int = 16.3 ms and V b = 0.7 V͒ with a peak quantum efficiency and detectivity at 3.8 m equal to 52% and 6.7ϫ 10 11 Jones, respectively.