This study used Finite Volume Method to simulate the magnetic profile of PVD (physical vapor deposition) chamber. For this longthrow PVD, the adaptor of the gap filling chamber has 120 mm height and 44 sets of side magnets around the adaptor. The polarity of the side magnets is the same as the top magnets of the chamber. These side magnets can very effectively increase electron mobility and collision frequency with sputtered atoms. The plasma simulation result shows that ionization rate on sputtered atoms can be up to 12% from such a PVD system along with such a magnet arrangement. Therefore, it shows a significant improvement on bottom side-wall coverage of via hole up to 45%. The deposition rate increases by 40%. In addition, the adjustment of RF bias and resputtering power can result in further improvement on 3/4 depth of side-wall coverage by 30% and corner step coverage by 70%. This study uses a simple method to apply 3DIC gap filling capability for an increase of aspect ratio (AR).

This study used Finite Volume Method to simulate the magnetic profile of PVD (physical vapor deposition) chamber. It can be applied to different kinds of magnet arrangements to the longthrow sputtering PVD. For this long throw PVD, the best optimized process conditions and results from simulations included effects from chamber adaptor height, side magnet space, and magnet arangements. The side magnets consist of a total of 44 sets for one supporter around the chamber adaptor. Each set has three magnets. Each magnet has the magnetic field strength of 5,500 Gauss. The adaptor of gap filling chamber has a height of 120 mm and 44 sets of magnets around the adaptor. The polarity of side magnets is the same as the top magnets of the chamber. These magnets can very effectively increase of electron mobility and collision frequency with sputtered atoms. The plasma simulation result shows that the ionization rate on supttered atoms can be up to 26% from such a longthrow PVD system along with such magnets arrangement. Therefore, it shows a significant improvement on bottom side-wall step coverage in via hole up to 45%. The deposition rate increases by 40%. In addition, by adjusting RF bias and resputtering power, further improvement with 3/4 depth of side-wall step coverage by 30% and corner step coverage by 70% can be obtained. This study uses a simple method to apply to 3DIC gap filling capability for an increase of aspect ratio (AR). The improvement from this longthrow sputtering PVD with side magnets design around the adaptor not only results in low cost target design but also provides a very effective gap filling capability with higher deposition rate for 3DIC application.