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Hydrogenated amorphous silicon solar cells were fabricated by photochemical vapor deposition. A three-separate-chamber system was newly developed to reduce the contamination of the dopant elements as well as oxygen or water originated by the loading and unloading procedure. Wide optical band-gap hydrogenated amorphous silicon carbide was prepared using acetylene (C2H2) for the p layer. The deposition conditions for each layer were optimized and the highest-energy conversion efficiency of 9.64% was obtained. This high conversion efficiency was mainly attributed to the large short-circuit current which indicated that the quality of the i layer is reasonably good.

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