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In this work is investigated the optimal conditions for deposition of pure-phase anatase and rutile thin films prepared at low temperatures (less than 150 0 C) by reactive dc magnetron sputtering onto well-cleaned p-type Si substrates. For this, the variation of deposition plasma parameters as substrate-to-target distance, total gas pressure, oxygen concentration, and substrate bias were studied and correlated with the characteristics of the deposited films. The XRD analysis indicates the formation of pure rutile phase when the substrate is biased at voltages between −200 and −300 V. Pure anatase phase is only attained when the total pressure is higher than 0.7 Pa. Moreover, it's noticeable a strong dependence of surface roughness with parameters studied.

This article reports on the effect of the increase of substrate temperature due to the plasma discharge on the crystalline structure of the TiO 2 thin films deposited on silicon by the magnetron sputtering technique. The influence on the film crystallinity was evaluated as a function of process parameters, such as, substrate-to-target distance and reactive gas concentration. The substrate holder was equipped with two thermocouples in order to measure simultaneously the substrate temperature T s and the substrate surface temperature T surf during the deposition. The films were analyzed by X-ray diffractometry (XRD) and profilometry. Results show that the critical temperature to obtain crystalline films depends upon the gas composition and it varies from 170ºC -210ºC for oxygen concentration in the gas mixture varying from 20 to 100%.

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