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We describe the pulsed-laser deposition (PLD) and characterization of bismuth silicon oxide (BSO, Bii2SiO2o) thin films and Ce-doped yttrium iron garnet (Ce:YIG, CeY3_Fe5Oi2) thin films for the electric and magnetic field sensor application. It was found that BSO films deposited on yttria-stabilized zirconia (YSZ) substrates heated at 400 °C or higher in an oxygen ambient gas were crystallized and the (310) plane was perpendicular to the substrate normal. The highly (310) oriented crystallized films were also deposited even on Si02 glass substrates. On the other hand, crystallized Ce:YIG films were obtained by the deposition in an Ar ambient gas, and not in an oxygen ambient gas, indicating the importance of the control of the charge state of Ce ions. The magneto-optic data of Ce:YIG films are also reported.

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