Controlled charge pumping in an AlGaAs/GaAs gated nanowire by single-parameter modulation is studied experimentally and theoretically. Transfer of integral multiples of the elementary charge per modulation cycle is clearly demonstrated. A simple theoretical model shows that such a quantized current can be generated via loading and unloading of a dynamic quasi-bound state. It demonstrates that non-adiabatic blockade of unwanted tunnel events can obliterate the requirement of having at least two phase-shifted periodic signals to realize quantized pumping. The simple configuration without multiple pumping signals might find wide application in metrological experiments and quantum electronics.PACS numbers: 73.23.Hk,73.22.Dj,73.63.Kv An important milestone in the study of single electron transport is the closure of the quantum metrological triangle for frequency, dc current, and dc voltage [1]. Dc voltage is currently realized from the frequency standard through the Josephson effect. Dc current can then be derived using the quantum Hall effect. Direct realization of dc current from frequency is the currently missing side of the triangle. The closure of the quantum metrological triangle provides a test whether the fundamental constants really appear the same in these different systems [2]. The results of this kind of experiment will also impact on a future system of units which might be based on fundamental constants [3].A current source relevant for the above experiments must produce at least nanoampere currents to be measurable with sufficient accuracy. The electron pump based on arrays of Coulomb blockaded quantum dots (see [4] for a review) or quantum interference [2,5,6] is one class of devices being investigated with respect to metrological relevance [7,8,9]. Electron pumps are typically driven by multiple radio frequency (rf) signals with a well maintained phase relationship, producing a quantized current, i.e. limited to certain values according to I = −nef (with n = 1, 2, 3 . . . , e the negative elementary charge and f the driving frequency). Usually, the accuracy in I degrades with increasing f , which has so far prevented the generation of sufficiently accurate nanoampere currents. An alternative, but challenging task would be the parallelization of pumps driven at intermediate frequencies. Here, pumps requiring only a single rf signal would fundamentally reduce the complexity in the parallelization of such devices. However, electron pumps driven by only one gate [10,11,12,13] have so far not experimentally demonstrated the generation of quantized current. In addition, most models of quantized pumping [5,6,14,15,16,17] have assumed at least two parameters modulated out phase, which may be motivated by the fact that in the adiabatic limit a single periodic perturbation cannot determine the direction of the current [18].In this paper we address this issue and report on the first experimental realization of quantized charge pumping in which only one gate is modulated. We demonstrate on a transparent quantu...

Demonstrating improved confinement of energetic ions is one of the key goals of the Wendelstein 7-X (W7-X) stellarator. In the past campaigns, measuring confined fast ions has proven to be challenging. Future deuterium campaigns would open up the option of using fusion-produced neutrons to indirectly observe confined fast ions. There are two neutron populations: 2.45 MeV neutrons from thermonuclear and beam-target fusion, and 14.1 MeV neutrons from DT reactions between tritium fusion products and bulk deuterium. The 14.1 MeV neutron signal can be measured using a scintillating fiber neutron detector, whereas the overall neutron rate is monitored by common radiation safety detectors, for instance fission chambers. The fusion rates are dependent on the slowing-down distribution of the deuterium and tritium ions, which in turn depend on the magnetic configuration via fast ion orbits. In this work, we investigate the effect of magnetic configuration on neutron production rates in W7-X. The neutral beam injection, beam and triton slowing-down distributions, and the fusion reactivity are simulated with the ASCOT suite of codes. The results indicate that the magnetic configuration has only a small effect on the production of 2.45 MeV neutrons from DD fusion and, particularly, on the 14.1 MeV neutron production rates. Despite triton losses of up to 50 %, the amount of 14.1 MeV neutrons produced might be sufficient for a time-resolved detection using a scintillating fiber detector, although only in high-performance discharges.

We study tunneling magnetothermopower (TMTP) in CoFeB/MgO/CoFeB magnetic tunnel junction nanopillars. Thermal gradients across the junctions are generated by an electric heater line. Thermopower voltages up to a few tens of μV between the top and bottom contact of the nanopillars are measured which scale linearly with the applied heating power and hence the thermal gradient. The thermopower signal varies by up to 10  μV upon reversal of the relative magnetic configuration of the two CoFeB layers from parallel to antiparallel. This signal change corresponds to a large spin-dependent Seebeck coefficient of the order of 100  μV/K and a large TMTP change of the tunnel junction of up to 90%.

After completing the main construction phase of Wendelstein 7-X (W7-X) and successfully commissioning the device, first plasma operation started at the end of 2015. Integral commissioning of plasma start-up and operation using electron cyclotron resonance heating (ECRH) and an extensive set of plasma diagnostics have been completed, allowing initial physics studies during the first operational campaign. Both in helium and hydrogen, plasma breakdown was easily achieved. Gaining experience with plasma vessel conditioning, discharge lengths could be extended gradually. Eventually, discharges lasted up to 6 s, reaching an injected energy of 4 MJ, which is twice the limit originally agreed for the limiter configuration employed during the first operational campaign. At power levels of 4 MW central electron densities reached 3  ×  1019 m−3, central electron temperatures reached values of 7 keV and ion temperatures reached just above 2 keV. Important physics studies during this first operational phase include a first assessment of power balance and energy confinement, ECRH power deposition experiments, 2nd harmonic O-mode ECRH using multi-pass absorption, and current drive experiments using electron cyclotron current drive. As in many plasma discharges the electron temperature exceeds the ion temperature significantly, these plasmas are governed by core electron root confinement showing a strong positive electric field in the plasma centre.

We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultrasmooth defect-and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication of high quality graphene-based electronic devices. The inherent but unfavorable formation of high SiC surface terrace steps during high temperature sublimation growth is suppressed by rapid formation of the graphene buffer layer which stabilizes the SiC surface. The enhanced nucleation is enforced by decomposition of polymer adsorbates which act as a carbon source. With most of the steps well below 0.75 nm pure monolayer graphene without bilayer inclusions is formed with lateral dimensions only limited by the size of the substrate. This makes the polymer assisted sublimation growth technique the most promising method for commercial wafer scale epitaxial graphene fabrication. The extraordinary electronic quality is evidenced by quantum resistance metrology at 4.2 K with until now unreached precision and high electron mobilities on mm scale devices. Main TextThe success of graphene as a basis for new applications depends crucially on the reliability of the available technologies to fabricate large areas of homogenous high quality graphene layers. Epitaxial growth on metals as well as on SiC substrates is employed with specific benefits and drawbacks.Single graphene layers epitaxially grown on SiC offer a high potential for electronic device applications. They combine excellent properties, e.g. high electron mobilities, with the opportunity for wafer-scale fabrication and direct processing on semi-insulating substrates without the need to transfer the graphene to a suitable substrate (Avouris & Dimitrakopoulos 2012). Some progress has been achieved during the recent years. In particular, high temperature sublimation growth under Ar atmosphere (Virojanadara et al. 2008),(Emtsev et al. 2009 or by confinement control (Heer et al. 2011), (Real et al. 2012) was a breakthrough for synthesizing large-area graphene on SiC substrates.The coverage of graphene bilayers could be reduced from wide stripes formed along the terraces to small micrometer-sized bilayer patches (Virojanadara et al. 2009). Further it was found that beyond pure sublimation growth from SiC graphene formation can be assisted by additional carbon supply from external sources (Al-Temimy et al. 2009;Moreau et al. 2010). In particular, by using propane in