SUMMARYSuccessive approximation register (SAR) analog-to-digital converters (ADCs) are widely used due to their low power consumption and area cost. However, testing SAR ADCs on an embedded chip is costly. This paper proposes a capacitance-ratio quantification design for the linearity test of differential top-plate sampling SAR ADCs. First, the pattern generator controls the switches connected to the bottom plate of capacitors to create a voltage difference proportional to a certain capacitance ratio on the top plates to be quantified. Then, the proposed mechanism quantifies the capacitance ratio via the auxiliary transistors connected to the input pair of the comparator in the SAR ADC. The capacitance ratios are recorded to construct the differential nonlinearity (DNL) and integral nonlinearity (INL) using the derived construction principles, which simplifies the implementation of the output response analyzer. Thus, the test time and area cost can be reduced with these two proposed mechanisms. For characterizing the DNL, the error between the results obtained using the proposed method and those obtained using conventional linear ramp histogram method is from À0.10 to 0.11 least significant bits (LSBs). For the INL, the estimation error is from À0.19 to 0.11 LSBs. Moreover, a test time reduction of about 76% is achieved at the expense of an 18.54% area overhead for the capacitance-ratio quantification mechanism.

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The proposed stimulus design for linearity test is embedded in a differential successive approximation register analog-to-digital converter (SAR ADC), i.e. a design for testability (DFT). The proposed DFT is compatible to the pattern generator (PG) and output response analyzer (ORA) with the cost of 12.4-% area of the SAR ADC. The 10-bit SAR ADC prototype is verified in a 0.18-μm CMOS technology and the measured differential nonlinearity (DNL) error is between −0.386 and 0.281 LSB at 1-MS/s.

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This paper presents the first-principles study of an ultra-thin (monoclinic-) cubic-HfO 2 layer on GaAs substrate. The heavy stress in hafnia layer significantly causes the structure deformation and results in a charge transfer and superstoichiometric HfO y . The valence-band offset of the structure c-HfO 2 /GaAs is increased, while that of m-HfO 2 /GaAs is decreased after structure relaxation. These characteristics should significantly affect the properties of CMOS devices made from an ultra-thin HfO 2 dielectric film stacked on GaAs channel.