thin films were formed on NdGaO, substrates b q laser ablation. Critical temperatures greater than 89 K and cfitical current densities exceeding 2 x i@ Acm-' a t T i K were obtained. m e miaowme pefformanca of films patterned into microstrip ring resonators with gold ground planes was measured. An unloaded quality factor si% times larger than a that d a gold resonillo' of identical geometry w a s achieved. The unloaded quality faaor decreased below 70 K for b d h the superconducting and gold resonators due to increasing dielectric losses in the substrate. The temperature dependence of the loss tangent of NdGa03 was extracted from the measurements.

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