We have developed a new High Voltage CMOS (HV-CMOS) IC technology by using 5 p-thick SOI. In this technology, trench isolation and 0.5 pn rule CMOS process are also adopted. We have examined seven series HV-CMOS fabrication processes in the different voltage rating (which the maximum voltage rating was 250 V) and optimized their characteristics respectively. The HV-CMOS IC having full-CMOS type level shifter is suited to low power consumption Color Plasma Display Panel (C-PDP) and hgh-speed switching has been confirmed. The chip size of the devleloped PDP scan driver IC could be reduced by 40 % compared with the conventional one.

No abstract