Localized oscillating fields are beam splitters that can entangle internal and longitudinal momentum states in an atomic beam. Differentially detuned separated oscillatory fields and an am modulator constitute a "white fringe" longitudinal interferometer which rephases velocity averaging by a process analogous to half a spin echo. Differentially detuned separated oscillatory fields are used to produce a downstream coherence or rephase an upstream coherence in an atomic beam.[S0031-9007(98)06971-3]

This corrects the article DOI: 10.1103/PhysRevLett.119.162501.

The deformation of gas diffusion layer (GDL) under compacting pressure has a close relationship with transport properties, and electrical and thermal conductivity of proton exchange membrane fuel cell (PEMFC). In this paper, two kinds of GDL material models with different material parameters are studied with the finite element method (FEM). Taguchi orthogonal experiments and analysis of variance (ANOVA) are performed to determine their effects on mechanical analysis of GDL deformation in PEMFC. Finally, the effects of material parameters on GDL diffusion and electrical performance are discussed. The results reveal that elastic modulus (E) is the only factor affecting the maximum displacement for GDL with isotropic model when the Poisson's ratio (ν) is in the range of 0–0.1. For orthotropic model, the through‐plane elastic modulus (Ez) has a great impact on both the deformation and contact pressure. In‐plane elastic modulus (Ex) and through‐plane shear modulus (Gxz) have significant influences on contact pressure. Ez has a great impact on diffusion and electrical performance of GDL, while the effects of Ex, Gxz and ν are negligible. In addition, orthotropic GDL material model and the parameters utilized are effective in analyzing the deformation of GDL.

In order to test the Coulomb sum rule in nuclei, a precision measurement of inclusive electron scattering cross sections in the quasi-elastic region was performed at Jefferson Lab. Incident electrons of energies ranging from 0.4 GeV/c to 4 GeV/c scattered off 4 He, 12 C, 56 Fe and 208 Pb nuclei at four scattering angles ( 15 • , 60 • , 90 • , 120 • ) and scattered energies ranging from 0.1 GeV/c to 4 GeV/c. The Rosenbluth method with proper Coulomb corrections is used to extract the transverse and longitudinal response functions at three-momentum transfers 0.55 GeV/c ≤ |q| ≤ 1.0 GeV/c. The Coulomb Sum is determined in the same |q| range as mentioned above and will be compared to predictions. Analysis progress and preliminary results will be presented. PHYSICS MOTIVATIONThe test of Coulomb Sum Rule will shed light on the question of whether or not the properties of nucleons are modified in the nuclear medium. Coulomb Sum Rule states that the integration of the longitudinal response of a nucleus over the range of energy excitation dominated by quasi-elastic proton knock-out process should be equal to the total number of protons in the nucleus. As a result, quenching of the response at high momentum transfer may indicate the possibility of modification of nucleons' properties in the nuclear medium.ε(| q|, ω, θ ) = 1 + 2 q 2 Q 2 tan 2 θ 2 −1 R L = | q| Q 4 σ M

Topological insulators are a new class of quantum materials with metallic (edge) surface states and insulating bulk states. They exhibit various novel electronic and optical properties that make them highly promising electronic, spintronic, and optoelectronic materials. Our report confirms that the topological insulator Bi 1.5 Sb 0.5 Te 1.8 Se 1.2 (BSTS) is also an effective plasmonic material in the visible and near-infrared range. A BSTS film can effectively control transmission and reflection characteristics by changing the period of the hole array. This study determined that a strong resonant surface plasmonic mode at the resonance peak can confine approximately 80% of the electromagnetic field energy is demonstrated. Higher-order (second- and third-order) resonance peaks were also found, which is critical for controlling electromagnetic waves and research into new optoelectronic devices.