Material thermal properties characterization at nanoscales remains a challenge even if progresses were done in developing specific characterization techniques like the Scanning Thermal Microscopy (SThM). In the present work, we propose a detailed procedure based on the combined use of a SThM probe characterization and its Finite Element Modelling (FEM) to recover inoperando 3 measurements achieved under high vacuum. This approach is based on a two-step methodology: (i) a fine description of the probe's electrical and frequency behaviors in "out of contact" mode to determine intrinsic parameters of the SThM tip, (b) a minimization of the free parameter of our model, i.e. the contact thermal resistance, by comparing 3 measurements to our simulations of the probe operating "in contact mode". Such an approach allows us to accurately measure thermal interface resistances of the probe as a function of the strength applied between the tip and the surface for three different materials (silicon, silica and gold). In addition, FEM modeling provides insights about the 3-SThM technique sensitivity, as a function of probe/sample interface resistance to measure material thermal conductivity, paving the way to quantitative SThM measurements.

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