Organic light emitting diodes (OLED) and amorphous oxide semiconductors (AOSs), which are very important technologies in high performance flexible displays, have issues related to degradation due to diffusion of water...

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High-density SnO x and SiO x thin films were deposited via atomic layer deposition (ALD) at low temperatures (100 °C) using tetrakis(dimethylamino)tin(IV) (TDMASn) and di-isopropylaminosilane (DIPAS) as precursors and hydrogen peroxide (H 2 O 2 ) and O 2 plasma as reactants, respectively. The thin-film encapsulation (TFE) properties of SnO x and SiO x were demonstrated with thickness dependence measurements of the water vapor transmission rate (WVTR) evaluated at 50 °C and 90% relative humidity, and different TFE performance tendencies were observed between thermal and plasma ALD SnO x . The film density, crystallinity, and pinholes formed in the SnO x film appeared to be closely related to the diffusion barrier properties of the film. Based on the above results, a nanolaminate (NL) structure consisting of SiO x and SnO x deposited using plasma-enhanced ALD was measured using WVTR (H 2 O molecule diffusion) at 2.43 × 10 −5 g/m 2 day with a 10/10 nm NL structure and time-lag gas permeation measurement (H 2 gas diffusion) for applications as passivation layers in various electronic devices.