In this research , a current density of J = 7.5 mA/cm2 was applied over a constant duration of 2 h to grow Ge-like microflowers on Si. To fabricate a photodetector, Pd was deposited by RF-sputtering as metal contact with Ge. The samples were subjected to rapid thermal annealing (RTA) in ambient N2 at 100,200° and 300°C for 10 min. By screening the samples from electrical noise, the electrical characteristics through current-voltage measurements were carried out at room temperature before and after annealing. The measurements were performed in the dark, white light and UV illuminations. The forward I-V characteristics were analyzed using standard thermionic emission relation for electron transport from Metal-semiconductor-metal(MSM)with low doping concentration .The saturation current was obtained as the intercept from the straight line of ln I versus V, T. It was found that at 5V, these currents were 2.45 × 10-5, 5.77× 10-5, 6.12× 10-4 A, respectively. Also characteristics of the MSM photodetector, linear and logarithmic forward and reverse bias, at different annealing temperatures: as-deposited, 100°C, 200°C and 300°C in the dark mode.

GRIN lenses represent an interesting alternative to conventional spherical lenses since the lens performance depends on a continuous change of the refractive index within the lens material. This paper using of the high-index-of-refraction lanthanum crown glass (SLS-1.0) which helps to reduce spherical aberration the design and analysis the gradient -index lenses by using Zemax software that we can see the changing in refractive index. wave length extends from (0.500 to 0.600) µm and diffraction limited over a large field of angles with F/#2.5 that have been studied in this research .This paperdeals how to design and analysis work and how to take advantage of gradient index image applications,which helps to reduce the modulation of the refractive-index profile.

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