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The current scholarly discussion concerning the Belt and Road Initiative (BRI) seeks to connect the investment activities on the ground with its strategic objectives, and attributes their mismatch to subnational factors or third‐party interventions. Few scholars question the fundamental conceptualization of the BRI as a new grand strategy. First, this paper argues that China has not dictated the Central Asian development agenda, nor has it demonstrated a strong capability for institutional innovation. It then adopts the foreign policy analysis approach to trace the regional, international, and domestic factors shaping the content of the BRI. In particular, this paper finds out that the BRI reveals Beijing's strong consistency in economy‐driven diplomacy while recalculating the interests and risks of participation in economic globalization. The BRI should not be interpreted as a new concrete strategy to challenge the existing world order.

This paper discusses linearity and robustness together for the first time, disclosing a way to improve them. It reveals that the nonlinear transconductance with device working at quasi-saturation region is significant factor of device linearity. The peak electric field is the root cause of electron velocity saturation. The high electric field at the drift region near the drain will cause more electronhole pairs generated to trigger the parasitic NPN transistor turn-on, which may cause failure of device. Devices with different drift region doping are simulated with TCAD and measured. With LDD4 doping, the peak electric field in the drift region is reduced; the linear region of the transconductance is broadened. The adjacent channel power ratio is decreased by 2 dBc; 12% more power can be discharged before the NPN transistor turn-on, indicating a better linearity and robustness.

LDMOS devices with grounded gate shield structures variations were simulated and tested, aiming to address hot carrier immunity and robustness concurrently. Optimal con guration of grounded gate shield structure was found to reduce local electrical eld strength at gate-to-drain overlap for better hot carrier immunity, and to achieve uniform E-eld distribution on drain side for robustness as well. Design trade o of hot carrier immunity (HCI) and robustness is analyzed by simulation and silicon data.