The interplay between different ordered phases, such as superconducting, charge or spin ordered phases, is of central interest in condensed-matter physics. The very recent discovery of superconductivity with a remarkable Tc = 26 K in Fe-based oxypnictide La(O1−xFx)FeAs (see Kamihara Y. et al., J. Am. Chem. Soc., 130 (2008) 3296) is a surprise to the scientific community and has generated tremendous interest. The pure LaOFeAs itself is not superconducting but shows an anomaly near 150 K in both resistivity and dc magnetic susceptibility. Here we provide combined experimental and theoretical evidences showing that a spin-density-wave (SDW) state develops at low temperature, in association with electron Nematic order. The electron-doping by F suppresses the SDW instability and induces the superconductivity. Therefore, the La(O1−xFx)FeAs offers an exciting new system showing competing orders in layered compounds.

Bismuth selenide (Bi(2)Se(3)) is a topological insulator with metallic surface states (SS) residing in a large bulk bandgap. In experiments, synthesized Bi(2)Se(3) is often heavily n-type doped due to selenium vacancies. Furthermore, it is discovered from experiments on bulk single crystals that Bi(2)Se(3) gets additional n-type doping after exposure to the atmosphere, thereby reducing the relative contribution of SS in total conductivity. In this article, transport measurements on Bi(2)Se(3) nanoribbons provide additional evidence of such environmental doping process. Systematic surface composition analyses by X-ray photoelectron spectroscopy reveal fast formation and continuous growth of native oxide on Bi(2)Se(3) under ambient conditions. In addition to n-type doping at the surface, such surface oxidation is likely the material origin of the degradation of topological SS. Appropriate surface passivation or encapsulation may be required to probe topological SS of Bi(2)Se(3) by transport measurements.

Layered transition-metal dichalcogenides have emerged as exciting material systems with atomically thin geometries and unique electronic properties. Pressure is a powerful tool for continuously tuning their crystal and electronic structures away from the pristine states. Here, we systematically investigated the pressurized behavior of MoSe2 up to ∼60 GPa using multiple experimental techniques and ab-initio calculations. MoSe2 evolves from an anisotropic two-dimensional layered network to a three-dimensional structure without a structural transition, which is a complete contrast to MoS2. The role of the chalcogenide anions in stabilizing different layered patterns is underscored by our layer sliding calculations. MoSe2 possesses highly tunable transport properties under pressure, determined by the gradual narrowing of its band-gap followed by metallization. The continuous tuning of its electronic structure and band-gap in the range of visible light to infrared suggest possible energy-variable optoelectronics applications in pressurized transition-metal dichalcogenides.