Topological lasers are immune to imperfections and disorder. They have been recently demonstrated based on many kinds of robust edge states, which are mostly at the microscale. The realization of 2D on-chip topological nanolasers with a small footprint, a low threshold and high energy efficiency has yet to be explored. Here, we report the first experimental demonstration of a topological nanolaser with high performance in a 2D photonic crystal slab. A topological nanocavity is formed utilizing the Wannier-type 0D corner state. Lasing behaviour with a low threshold of approximately 1 µW and a high spontaneous emission coupling factor of 0.25 is observed with quantum dots as the active material. Such performance is much better than that of topological edge lasers and comparable to that of conventional photonic crystal nanolasers. Our experimental demonstration of a low-threshold topological nanolaser will be of great significance to the development of topological nanophotonic circuitry for the manipulation of photons in classical and quantum regimes.
We analyze the light scattered by a single InAs quantum dot interacting with a resonant continuous-wave laser. High resolution spectra reveal clear distinctions between coherent and incoherent scattering, with the laser intensity spanning over four orders of magnitude. We find that the fraction of coherently scattered photons can approach unity under sufficiently weak or detuned excitation, ruling out pure dephasing as a relevant decoherence mechanism. We show how spectral diffusion shapes spectra, correlation functions, and phase-coherence, concealing the ideal radiativelybroadened two-level system described by Mollow.
Well-defined complex quantum ring structures formed by droplet epitaxy are demonstrated. By varying the temperature of the crystallizing Ga droplets and changing the As flux, GaAs/ AlGaAs quantum single rings and concentric quantum double rings are fabricated, and double-ring complexes are observed. The growth mechanism of these quantum ring complexes is addressed.
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